EVALSTDRIVE101 - Questions about FET's gate circuits
Hello,
I use ST's STDRIVE101 in a design to drive a three-phase BLDC motor and used the reference design EVALSTDRIVE101 as a design guideline. My design has a MOSFET switching frequency of 20 kHz and a MOSFET drain-source voltage between 36 and 42 V.
I have some questions about the design’s power stage (see screenshot from the design’s documentation below) and would be very grateful for an answer. All designators mentioned are taken from the screenshot.

My questions are:
- Gate resistor R11: Is there a strong reason for choosing 33 Ohm? My thinking is that when using a smaller resistor, the MOSFET’s switching on process could be sped up as my design uses a MOSFET capable of turning on faster. Is this possible with STDRIVE101 and to what extent could the gate resistor be reduced?
- Gate driver diode D1: This is used for faster switching off the gate by bypassing R11 if I get the design correctly?
- Resistor R14: I assume this is a pull-down resistor to drain the gate from unwanted charge when the MOSFET is turned off?
Thanks in advance for taking the time for an answer!
Regards,
mual
