Internal Gate Resistance of STP150N10F7

[Vamsi-1909]

Hey everyone,

I am trying to derive the internal gate resistance (R_Gint) of STP150N10F7. Can anyone help me with the calculation please.

https://www.st.com/resource/en/datasheet/stp150n10f7.pdf

 

Regards,
Vamsi.

 

[AScha.3]

Hi,

no internal gate resistance is given in ds - so we can assume : there is no "extra" internal gate resistance .

The "remainig" resistance is just the gate contact distribution , maybe < 1 ohm.

So from ds : with 4r7 at gate, mosfet switches ON after 33ns , in about 57ns , to 55A drain current.

Lets try simu at the gate : 4r7 at 8nF ->

The 6v level, mosfet begins to switch on, is at about 20ns ; so there cannot be much internal gate resistance .

lets try ...adding 2 ohm:

Now current rise will be after about 30ns , good match with the 33ns from ds;

so internal resistance at gate might be something around 1...2 ohms.