TCPP03-M20 Single Power Path
Hello,
I am using the TCPP03-M20, and would like to save space/cost by combining the Source and Sink path into one mosfet gate pair.
The datasheet provides an example of a combined source/sink path using two Schottky diodes and a 1M resistor with the side effect of increasing the gate transition time to 1ms. With the voltages/currents in my application this is enough to cause the mosfets to overheat and fail.
What would you suggest for preventing this failure?
Is it possible to change the library code for this chip to allow the use of only the source path for both sourcing and sinking?
Thanks,
Nate
