Writing to M24M02E-F EEPROM
Hi ST,
I have some doubts related to writing to M24M02E-F EEPROM.
DS14157 (Rev 1 - December 2023) in section "6.1.2 Page write" states:
1. "The page write mode allows up to 256 bytes to be written in a single write cycle"
How is this achievable since the first two bytes are used for memory address and typically no more than 255 bytes total can be send over I2C in a single cycle? If I am correct, actually only 253 memory bytes can be written in one cycle. Please confirm/clarify.
2. "After each transferred byte, the internal page address counter is incremented."
How is this relevant? How the internal page address counter can be used during write operation? Does it potentially affect read operations only?
3. It is completely unclear to me what section "6.2.6 Minimizing write delays by polling on ACK" tries to explain.
Is it some way to continue write operation without resending memory address? Unfortunately, it seems that it is possible only when reading data.
