Calculating Rext after increasing LSE Drive Level on STM32H7
Hello,
A design I am working on utilizes a LSE crystal with the following parameters:
f = 32.768kHz
CL = 12.5pF
Co = 0.9pF
ESR = 50kR Max
DL = 1uW MAX
I am calculating gmcrit ~ 1.52uA/V. According to table 5 in AN2867, the drive level should be set to Medium High, will REXT required? The design is already produced without REXT so adding it is not advised if avoidable.
I don't have the instrumentation to measure the actual drive level as it requires ~0.1pF probes for proper measurement. There is no indication of LSE max drive current for the H7, the datasheet only specifies 550nA IDD at medium high.
Should I be concerned that Medium High may violate 1uW?
Thanks
