Overwriting Internal flash after erasing previous data doesn't work
Hi
I was trying to store the status of certain pins on flash memory so that I can read from flash and resume after power cycle, I have successfully written data in flash memory, I chose the last page starting address to store my data.
void write_array_to_flash(uint8_t* data, uint32_t size) {
check_write_protection(STATUS_ARRAY_ADDRESS);
HAL_FLASH_Unlock();
// Erase the sector before writing (if necessary)
FLASH_EraseInitTypeDef eraseInitStruct;
uint32_t pageError = 0;
eraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
eraseInitStruct.Page = (STATUS_ARRAY_ADDRESS - FLASH_BASE) / FLASH_PAGE_SIZE;
eraseInitStruct.NbPages = 1;
if (HAL_FLASHEx_Erase(&eraseInitStruct, &pageError) != HAL_OK) {
// Handle error
HAL_FLASH_Lock();
return;
}
// Write the array to flash
uint64_t data_quadword[2] = {0xFFFFFFFFFFFFFFFF, 0xFFFFFFFFFFFFFFFF};
memcpy(data_quadword, data, size);
// Ensure the address is aligned for a quad word write
if ((STATUS_ARRAY_ADDRESS % 16) != 0) {
// Handle error
HAL_FLASH_Lock();
return;
}
HAL_FLASH_Program(FLASH_TYPEPROGRAM_QUADWORD, STATUS_ARRAY_ADDRESS, (uint32_t)data_quadword);
HAL_FLASH_Lock();
}But when trying to overwrite data after erasing it is not happening, when observed in debug state, the memory sector is not under write protection, when erase function HAL_FLASHEx_Erase(&eraseInitStruct, &pageError) is called it returns HAL_OK but when memory segment observed, the data in that memory segment did not become all 1's, later when HAL_FLASH_Program(FLASH_TYPEPROGRAM_QUADWORD, STATUS_ARRAY_ADDRESS, (uint32_t)data_quadword) is called not data change is observed.
I've attached the main.c file below. Let me know where I'm going wrong.
Thankyou.